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MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2527 is a GaAs RF amplifier designed for WiMAX CPE.
4.5 1.0
FEATURES
* * * * * * * * * InGaP HBT Device 6V Operation 27dBm Linear Output Power 33dB Linear Gain Integrated Output Power Detector Integrated 1-bit 19dB Step Attenuator 50ohms Matched Surface Mount Package RoHS Compliant Package
4.5
36E 2527 (Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1 2 3 4 5
1 2 3 4 5 6 7 8 9 10
Pin Vc (Vcb) Vc (Vc1) Vc (Vc2) Vc (Vc3) Pout Po_det GND Vref Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF 1000pF
Pin Vcont (0/3V) Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
(1/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
Conditions* Pout27.0dBm Pout27.0dBm Pout27.0dBm Value 8 3 3.3 80 Unit V V V mA mA mA dBm % C C
ABSOLUTE MAXIMUM RATINGS (Ta=25C)
Symbol Vc1, Vc2 Vc3, Vcb Vref Vcont Ic1 Ic2 Ic3 Pin Tc(op) Tstg Input Power Duty Cycle Operation Temperature Storage Temperature Pout27.0dBm Pout27.0dBm Pout27.0dBm Operation Current Pout27.0dBm Parameter Collector Supply Voltage Reference Voltage ATT Control Voltage
250 900 5 50 -30~+85 -40~+125
*NOTE : Zin=Zout=50 Each maximum rating is guaranteed independently. Please take care that MGFS36E2527 is operated under these conditions at the worst case on your terminal.
ELECTRICAL CHARACTERISTICS (Ta=25C)
Symbol f Gp t EVM Vdet ATT Ileak Parameter Frequency Gain Efficiency EVM Power Detector Voltage Control Gain Step Leakage Current Test Conditions* Min Vc=6V, Vref=2.85V Pout=27dBm 64QAM OFDM Modulation Duty Cycle < 50% Vcont=3V Vc=6V, Vref=0V 2.5 33 12 2.5 2.0 19 10 Limits Typ Max 2.7 GHz dB % % V dB A Unit
*NOTE : Zin=Zout=50
ESD RATING
- Class 1A (HBM)
MOISTURE SENSITIVITY LEVEL - Level 3 THERMAL RESISTANCE : 30C/W
MITSUBISHI ELECTRIC CORP.
(2/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
PERFORMANCE DATA
WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power
30 Vc=6V Vref=2.85V Vcont=0V Output Power (dBm) 25 Efficiency (%)
Efficiency vs. Output Power
20 18 16 14 12 10 8 6 2.5GHz 2.6GHz 2.7GHz 4 2 0 0 10 15 20 Output Power (dBm) 25 2.5GHz 2.6GHz 2.7GHz 30 Vc=6V Vref=2.85V Vcont=0V
20
15
10 -20 -15 -10 Input Power (dBm) -5
EVM vs. Output Power
6.0 5.5 5.0 4.5 4.0 EVM (%) Vc=6V Vref=2.85V Vcont=0V 2.5GHz 2.6GHz 2.7GHz
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 2.5GHz 2.6GHz 2.7GHz 10 15 20 Output Power (dBm) 25 30 Vc=6V Vref=2.85V Vcont=0V
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 30
Attenuation Performance
40 Vc=6V Vref=2.85V 30 S21 (dB) Vcont=0V Vcont=3V
20
10
0 2.0 2.2 2.4 2.6 2.8 3.0 Frequency (GHz)
MITSUBISHI ELECTRIC CORP.
(3/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
WiMAX OFDM 64QAM signal input. Output Power vs. Input Power
30 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V Efficiency (%)
Efficiency vs. Output Power
20 18 16 14 12 10 8 6 4 2 0 0 10 15 20 Output Power (dBm) 25 -30degC 0degC 25degC 60degC 85degC 30 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V
Output Power (dBm)
25
20
15
-30degC 0degC 25degC 60degC 85degC -20 -15 -10 Input Power (dBm) -5
10
EVM vs. Output Power
6.0 5.5 5.0 4.5 4.0 EVM (%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 -30degC 0degC 25degC 30 60degC 85degC 3.5 f =2.6GHz Vc=6V Vref=2.85V Vcont=0V
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 30 -30degC 0degC 25degC 60degC 85degC f =2.6GHz Vc=6V Vref=2.85V Vcont=0V
Attenuation Level
22 21 Attenuation Level (dB) 20 19 18 17 16 -30 0 30 60 Case Temperature (degC) 90 f=2.6GHz Vc=6V Vref=2.85V
MITSUBISHI ELECTRIC CORP.
(4/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
WiMAX OFDM 64QAM signal input. Ta=25degC. Output Power vs. Input Power
30 f =2.6GHz Vc=6V Vcont=0V Output Power (dBm) 25 Efficiency (%)
Efficiency vs. Output Power
20 18 16 14 12 10 8 6 f =2.6GHz Vc=6V Vcont=0V
20
15
Vref=2.75V Vref=2.85V Vref=2.95V -20 -15 -10 Input Power (dBm) -5 0
4 2 0 10 15 20 Output Power (dBm) 25
Vref=2.75V Vref=2.85V Vref=2.95V 30
10
EVM vs. Output Power
6.0 5.5 5.0 4.5 4.0 EVM (%) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 30 3.5 f =2.6GHz Vc=6V Vcont=0V Vref=2.75V Vref=2.85V Vref=2.95V
Detector Voltage vs. Output Power
3.0 2.5 2.0 Vdet (V) 1.5 1.0 0.5 0.0 10 15 20 Output Power (dBm) 25 30 Vref=2.75V Vref=2.85V Vref=2.95V f =2.6GHz Vc=6V Vcont=0V
Attenuation Level
22 21 Attenuation Level (dB) 20 19 18 17 16 2.7 2.8 2.9 Reference Voltage (V) 3.0 f=2.6GHz Vc=6V
MITSUBISHI ELECTRIC CORP.
(5/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
APPLICATION CIRCUIT
50ohms
RF Input
Pin Vcb Vc1 Vc2
Vcont Vref
1000pF
Attenuator Control Reference Voltage Detector Voltage Out RF Output
1000pF
GND Po_det
10nF
Supply Voltage
Vc3
1uF 1000pF
Pout
50ohms
Pulse Operation is controlled by Vref
PACKAGE OUTLINE
4.5 1st pin mark
1.3 (max) 1.0 (typ) 4.5 4.1 3.6 1.8
0.3
0.3 3.65 2.65
Dimension in millimeters. Unless specified tolerance 0.2mm.
0.5 0.5
MITSUBISHI ELECTRIC CORP.
(6/7) January-2008
MITSUBISHI SEMICONDUCTOR
MGFS36E2527
Specifications are subject to change without notice.
2.5-2.7GHz HBT HYBRID IC
HANDLING PRECAUTION
1) Work desk, test equipment, soldering iron and worker should be grounded before mounting and testing. Please note that electric discharge of GaAs HBT is much more sensitive than that of Si transistor. Handling without ground possibly damages GaAs HBT. 2) The surface of a board on which this product is mounted should be as flat and clean as possible to prevent a substrate from cracking by bending this product. 3) IR reflow soldering condition is confirmed following profile.
260degC 225degC (PKG Surface temp.)
*10sec
* 70sec
180+/-10degC 120+/-20sec
4) Handling precaution at high temperature This product has the structure of sealing with epoxy resin on grass epoxy substrate. This epoxy resin gets soft if the temperature exceeds glass transition temperature=120degC, and the thermic decomposition is occurred if the temperature exceeds 350degC. Therefore, in case of heating this product, please keep the same heat profile as recommended reflow one. Please note that crack, flaw or modification may be generated if softened epoxy resin part is handled with tweezers and etc at high temperature. 5) Cleaning condition Please select after confirming administrative guidance, legal restrictions, and the mass of the residual ion contaminant etc., and use it. 6) After soldering, please remove the flux. Please take care that solvent does not penetrate into this product. 7) GaAs HBT contains As(Arsenic). This product should be dumped as particular industrial waste.
MITSUBISHI ELECTRIC CORP.
(7/7) January-2008

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